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v01.0300
MICROWAVE CORPORATION
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
Typical Applications
The HMC294 is ideal for: * Microwave Pt to Pt Radios * LMDS * SATCOM
Features
Input IP3: +20 dBm LO / RF Isolation: 27 dB Passive: No DC Bias Required Small Size: 0.88 mm x 1.93 mm
Functional Diagram
General Description
The HMC294 chip is a miniature passive GaAs MMIC double-balanced mixer which can be used as an upconverter or downconverter from 25 - 40 GHz in a small chip area of 1.70 mm2. Excellent isolations are provided by on-chip baluns, which require no external components and no DC bias. All data is measured with the chip in a 50 ohm test fixture connected via 0.076 mm (3 mil) gold ribbon of minimal length <0.31 mm (<12 mils).
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MIXERS - CHIP
Electrical Specifications, TA = +25 C, LO Drive = +14 dBm
Parameter Frequency Range, RF & LO Frequency Range, IF Conversion Loss Noise Figure (SSB) LO to RF Isolation LO to IF Isolation RF to IF Isolation IP3 (Input) IP2 (Input) 1 dB Gain Compression (Input) 22 31 27 15 24 9 Min. Typ. 25 - 40 DC - 2 10 10 27 38 33 20 35 12 13 13 Max. Units GHz GHz dB dB dB dB dB dBm dBm dBm
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0300
MICROWAVE CORPORATION
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
Conversion Gain vs. Temperature @ LO = +14 dBm
0
Isolation @ LO = +14 dBm
0
CONVERSION GAIN (dB)
+25 C -5
-10
ISOLATION (dB)
-55 C
LO/RF -20
RF/IF
-10
-30
-15 +85 C -40 LO/IF -20 20 25 30 FREQUENCY (GHz) 35 40 -50 20 25 30 FREQUENCY (GHz) 35 40
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MIXERS - CHIP
Conversion Gain vs. LO Drive
0
Return Loss @ LO = +14 dBm
0
CONVERSION GAIN (dB)
+14 dBm
+16 dBm +12 dBm
RETURN LOSS (dB)
-5
-5
-10
RF -10 LO
-15 +8 dBm -20 20 25 30 FREQUENCY (GHz) 35 40 +10 dBm -15 20 25 30 FREQUENCY (GHz) 35 40
IF Bandwidth @ LO = +14 dBm
0
Upconverter Performance Conversion Gain @ LO = +14 dBm
0
IF CONVERSION GAIN (dB) AND RETURN LOSS (dB)
-5
CONVERSION GAIN (dB)
8
-5
IF Return Loss -10
-10
-15 IF Conversion Gain -20 0 2 4 IF FREQUENCY (GHz) 6
-15
-20 20 25 30 FREQUENCY (GHz) 35 40
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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v01.0300
MICROWAVE CORPORATION
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
Input IP3 vs. LO Drive
30 +14 dBm 25 +12 dBm
Input IP3 vs. Temperature @ LO = +14 dBm
30 +25C 25
INPUT IP3 (dBm)
INPUT IP3 (dBm)
20
20
15
15 -55C +85C
10 +10 dBm +8 dBm
10
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MIXERS - CHIP
5 20 25 30 FREQUENCY (GHz) 35 40
5 20 25 30 FREQUENCY (GHz) 35 40
Input IP2 vs. LO Drive
50 +14 dBm +12 dBm
Input IP2 vs. Temperature @ LO = +14 dBm
50 +85C
40
40
INPUT IP2 (dBm)
30
INPUT IP2 (dBm)
30 -55C
20 +10 dBm +8 dBm 0 20 25 30 FREQUENCY (GHz) 35 40
20 +25C 10
10
0 20 25 30 FREQUENCY (GHz) 35 40
Input P1dB vs. Temperature @ LO = +14 dBm
16 -55 C 14
MxN Spurious Outputs
nLO mRF 0 0 xx 25 1 3.9 0 91 47 59 >110 86 68 >110 105 106 2 3 4
INPUT P1dB
12
1
10 +85 C 8 +25 C
2 3 4
6 20 25 30 FREQUENCY (GHz) 35 40
RF = 35 GHz @ -10 dBm LO = 34 GHz @ +14 dBm All values in dBc below the IF power level.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0300
MICROWAVE CORPORATION
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
Absolute Maximum Ratings
RF / IF Input LO Drive Storage Temperature Operating Temperature +13 dBm +27 dBm -65 to +150 C -55 to +125 C
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Outline Drawing
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004". 3. TYPICAL BOND PAD IS .004" SQUARE. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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MIXERS - CHIP
MICROWAVE CORPORATION
v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
MIC Assembly Techniques
Ribbon Bond Ribbon Bond
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MIXERS - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on the RF ports.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Handling Precautions
Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
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MIXERS - CHIP
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Wire Bonding
Ribbon bond with 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ulrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com

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